[16a-W9_326-1~10] 3.12 Semiconductor optical devices

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-W9_326-6] Sidewall Etching Characteristics of AlGaInP for AlGaInP Red Micro LEDs Using Chlorine-Based Neutral Beam

〇(M1)Takahiro Kuribayashi¹, Daisuke Ohori¹, Xuelun Wang², Kazuhiko Endo^1,2, Seiji Samukawa^3,1 (1.IFS, Tohoku Univ., 2.AIST, 3.NYCU)

Keywords:

Neutral-Beam,AlGaInP Processing