Presentation Information

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-M_101-15]Realization of High Carrier Concentration by Suppression of Self-Compensating Defects in Ga-doped CdTe

〇Hayato Tsuru¹, Akira Nagaoka¹, Isshin Sumiyoshi², Yoshitaro Nose², Kenji Yoshino¹ (1.Miyazaki Univ., 2.kyoto Univ.)

Keywords:

crystal growth,travelling heater method (THM),CdTe

We fabricated Ga-doped CdTe single crystals using the THM method. In as-grown crystals, the carrier concentration saturated at ~10¹⁴ cm^-3 due to self-compensation by V_Cd-related complex defects. However, Cd-atmosphere annealing successfully suppressed these defects and improved PL properties, achieving a high carrier concentration in the 10¹⁶ cm^-3 range

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