[16p-M_101-1~18] 13.9 Compound solar cells

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[16p-M_101-4] Fabrication of test devices for thermo-radiative diode using GaSb-based dilute nitride alloys

〇Hiroto Kawahara¹, Tetsuya Nakamura², Yamato Kyuno¹, Tensei Kawasaki¹, Keisuke Yamane¹ (1.Toyohashi Tech, 2.JAXA)

Keywords:

Thermo-radiative diode,Molecular Beam Epitaxy

Thermo-radiative diode, which holds promise for space applications, utilizes the electromotive force generated by radiative recombination at pn junctions. In this study, we fabricated devices using GaSbN as the active layer via MBE, enabling narrow bandgap operation. To address last year's challenge of low power generation (15 pW), we detail the formation of mesa structures and electrode optimization. Dark-state I-V measurements confirmed excellent rectification characteristics with a rectification factor of 2.50. This presentation reports detailed power generation characteristics under thermal non-equilibrium conditions.