[16p-M_107-1~10] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-M_107-5] Current-density dependent formation termination of p⁺-type porous silicon

〇(M2)Daisuke Nakahashi¹, Yuki Harada¹, Lianhua Jin¹, Bernard Gelloz² (1.Univ. of Yamanashi, 2.Nagoya Univ.)

Keywords:

Porous silicon

This study investigates the dependence of the current-density formation termination of p+-type porous silicon and clarifies the possibility of multilayer formation, which is hereby reported.