[16p-M_107-1~10] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-M_107-8] Selective-area growth of vertical III-V nanowires on Si(111) using metal/insulator composite mask and multi-mode transistor application

〇Keita Taniyama¹, Hitoshi Watanabe¹, Yuki Takeda¹, Yuki Azuma¹, Katsuhiro Tomioka¹ (1.GS of IST and RCIQE, Hokkaido Univ.)

Keywords:

III-V,nanowire,FET