[16p-M_135-1~14] 1.5 Instrumentation, measurement and Metrology

2:15 PM - 2:45 PM JST(5:15 AM - 5:45 AM UTC)

[16p-M_135-2] [The 47th Paper Award Speech] High throughput observation of latent images on resist using laser-based photoemission electron microscopy

〇Hirokazu Fujiwara^1,2, Cedric Bareille³, Mario Okawa³, Shik Shin⁴, Toshiyuki Taniuchi^1,2 (1.GSFS, Univ. of Tokyo, 2.MIRC, Univ. of Tokyo, 3.ISSP, Univ. of Tokyo, 4.Univ. of Tokyo)

Keywords:

lithography,latent image,photoemission electron microscope

We demonstrated high-throughput observation of latent images in EB resist using laser-based photoemission electron microscopy with a continuous-wave laser. The latent images can be directly visualized as chemical contrast, and the estimated throughput improvement is approximately 2 million times compared to atomic force microscopy and approximately 50,000 times compared to single beam scanning electron microscopy. This technology enables rapid identification of exposure and development-induced defects through pre-development inspection, promising a significant improvement in process development efficiency.