Presentation Information
[16p-PA1-2]Growth of In-doped Bulk CdTe Crystals by THM and Characterization of Electrical, Optical, and Defect Properties
〇Hayato Tsuru1, Akira Nagaoka1, Isshin Sumiyoshi2, Yoshitaro Nose2, Kenji Yoshino1 (1.Miyazaki Univ., 2.kyoto Univ.)
Keywords:
crystal growth,travelling heater method (THM),CdTe
We grew In-doped CdTe bulk single crystals using the THM method, focusing on Indium due to its excellent lattice matching with Cd. Unlike Ga-doped crystals, In-doped samples exhibited n-type conduction (~1014 cm-3) in the as-grown state, suggesting the suppression of deep compensation defects. We also report on the improvement of carrier lifetime via Cd-atmosphere annealing and discuss the recombination dynamics.