Presentation Information
[16p-PB1-13]Development of a-SiC-based semiconductors with high opical properties
〇Munenori Kawasaki1, Kensuke Honda2 (1.Fac. Sci., Yamaguchi Univ., 2.Grad. Sci. Sci. Technol. Innov., Yamaguchi Univ.)
Keywords:
semiconductor,absorption coefficient,conductivity
Our laboratory has reported that N-doped a-SiC can be utilized as a CO2 reduction photocatalyst. However, a-SiC shows a low absorption coefficient, resulting in low conversion efficiency. Optical property of SiN was focused on. SiN exhibits a larger absorption coefficient in the deep ultraviolet region because of the differences in its bonding structure. However, SiN is an insulator and is not a semiconductor. Therefore, the objective of this study is to develop N-doped a-SiC semiconductors exhibiting high conductivity and high absorption coefficient by incorporating nitrogen atoms in amorphous Si-C networks.