Presentation Information
[16p-PB4-25]Graphene Growth on Ge(110) Substrates by Solid and Vapor Phase Growth Methods
〇(M1C)Masato Yamauchi1, Reiji Takeda1, Fumihiko Maeda1 (1.FIT Univ.)
Keywords:
graphene,solid and vapor phase growth methods,germanium substrate
In this study, we attempted to grow graphene on a commercially purchased Ge(110) wafer rather than on an epitaxially grown Ge substrate. We compared the outcomes of solid-phase growth using two types of photoresists with those of vapor-phase growth using ethanol and acetylene. Graphene growth was confirmed under all conditions, and the best result was obtained when S1818 was used. However, the crystalline quality was lower than that of graphene grown on hydrogen-terminated Ge, suggesting that controlling the surface condition of the substrate is crucial for achieving high-quality growth.