Presentation Information
[16p-PB4-28]Study on Multi-layered Fluorographene for Charge-trap-type Nonvolatile Memory Applications
〇Yuta Morohoshi1, Kohei Mashimo1, Ryousuke Ishikawa1, Hiroshi Nohira1, Yuichiro Mitani1 (1.Tokyo City Univ)
Keywords:
graphene,fluorographene
When fluorination is applied to graphene (Gr), a 2D material, it transforms from a conductive film into an insulating film. Leveraging this property, a non-volatile memory using fluorinated graphene (FGr) as a charge-trapping layer has been proposed and demonstrated to be effective. Although the charge trapping mechanism in FGr is not yet fully understood, we hypothesized that stacking FGr could enhance device performance. Therefore, this study aims to improve memory characteristics and elucidate the charge trapping mechanism by repeatedly transferring single-layer FGr to create stacked structures.