[16p-S2_201-1~11] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-S2_201-2] Electrical spin injection into two-dimensional electron gas formed at modulation-doped AlGaAs/GaAs heterostructure

〇Mineto Ogawa¹, Michihiko Yamanouchi¹, Tetsuya Uemura¹ (1.IST. Hokkaido Univ.)

Keywords:

semiconductor,spin injection,two-dimensional electron gas (2DEG)

Electrical spin injection and detection in AlGaAs/GaAs-based two-dimensional electron gas (2DEG) systems are essential for realizing 2DEG-based future spintronic devices. Previous studies employed inverted modulation-doped (MD) structures, in which a carrier-supplying layer of n-AlGaAs is located beneath the 2DEG. However, achieving high electron mobility is generally more challenging in the inverted structures compared to the conventional MD structure. In this study, we report electrical spin injection and detection using a conventional modulation-doped structure with a CoFe spin source. This study provides insights for the development of 2DEG-based spintronic devices.