[16p-S2_201-1~11] 10.4 半導体・トポロジカル・超伝導・強相関スピントロニクス

14:15 〜 14:30奨励賞エントリー

[16p-S2_201-2] Electrical spin injection into two-dimensional electron gas formed at modulation-doped AlGaAs/GaAs heterostructure

〇小川 峰登¹、山ノ内 路彦¹、植村 哲也¹ (1.北大院情報)

キーワード：

半導体、スピン注入、二次元電子ガス (2DEG)

Electrical spin injection and detection in AlGaAs/GaAs-based two-dimensional electron gas (2DEG) systems are essential for realizing 2DEG-based future spintronic devices. Previous studies employed inverted modulation-doped (MD) structures, in which a carrier-supplying layer of n-AlGaAs is located beneath the 2DEG. However, achieving high electron mobility is generally more challenging in the inverted structures compared to the conventional MD structure. In this study, we report electrical spin injection and detection using a conventional modulation-doped structure with a CoFe spin source. This study provides insights for the development of 2DEG-based spintronic devices.