Presentation Information
[16p-S2_203-15]Indexing current-voltage characteristics using a hash function
〇Tetsufumi Tanamoto1, Tomoko Mizutani2, Keiji Ono3, Toshiro Hiramoto2 (1.Teikyo Univ., 2.Tokyo Univ., 3.Riken)
Keywords:
transistor,I-V characteristics,Hash value
Effectively managing a large number of devices is crucial for enhancing the reliability of target
devices. Moreover, it is important to differentiate between devices of the same structure in order to achieve the optimal performance. However, identifying subtle differences can be challenging, particularly when the devices share similar characteristics, such as transistors on a wafer. To address this issue, we propose an indexing method for current–voltage (I–V) characteristics that assigns proximity numbers to similar devices. Specifically, we demonstrate the application of the locality-sensitive hashing (LSH) algorithm to Coulomb blockade phenomena observed in pMOSFETs and nanowire transistors. In this approach, lengthy data on current characteristics are replaced with hash IDs, facilitating the identification of individual devices and streamlining the management of a large number of devices.
devices. Moreover, it is important to differentiate between devices of the same structure in order to achieve the optimal performance. However, identifying subtle differences can be challenging, particularly when the devices share similar characteristics, such as transistors on a wafer. To address this issue, we propose an indexing method for current–voltage (I–V) characteristics that assigns proximity numbers to similar devices. Specifically, we demonstrate the application of the locality-sensitive hashing (LSH) algorithm to Coulomb blockade phenomena observed in pMOSFETs and nanowire transistors. In this approach, lengthy data on current characteristics are replaced with hash IDs, facilitating the identification of individual devices and streamlining the management of a large number of devices.