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Merit and Demerit of Impurity-Band-Effect-Connection Hole Current Paths in Highly Al-compositional and Mg-heavily-doped AlGaN Layers in Devices

15.4 III-V-group nitride crystals

The 73rd JSAP Spring Meeting 2026

Presentation Information

[16p-W2_401-16]Merit and Demerit of Impurity-Band-Effect-Connection Hole Current Paths in Highly Al-compositional and Mg-heavily-doped AlGaN Layers in Devices

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