[16p-W2_401-1~17] 15.4 III-V-group nitride crystals | The 73rd JSAP Spring Meeting 2026

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Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[16p-W2_401-1~17]15.4 III-V-group nitride crystals

Mon. Mar 16, 2026 1:00 PM - 5:45 PM JST
Mon. Mar 16, 2026 4:00 AM - 8:45 AM UTC

W2_401 (West Bldg. 2)

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W2_401-1]Growth of thin GaN film on AlN prepared by sputtering and face-to-face annealing and higher efficiency of UVC-LEDs

〇Ryota Akaike^1,2, Hiroki Yasunaga^2,3, Takao Nakamura^1,2, Toshiyuki Obata⁴, Kenji Yamashita⁴, Masahiko Tsuchiya⁴, Hideto Miyake^1,2 (1.Mie Univ. Grad. Sch. of Eng., 2.Mie Univ. IC-SDF, 3.Mie Univ. ORIP, 4.Stanley Electric Co.)

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[16p-W2_401-2]Strategies for fabricating long-lived 275-nm-band AlGaN QW LEDs

〇Shigefusa Chichibu¹, Kohei Shima¹, Masaki Oya², Atsushi Miyazaki², Shinya Boyama², Yoshiki Saito², Atsushi Tanaka³, Yoshio Honda⁴, Hiroshi Amano³, Hisanori Ishiguro⁴, Tetsuya Takeuchi⁴ (1.Tohoku Univ., 2.Toyoda Gosei Co. Ltd, 3.Nagoya Univ., 4.Meijo Univ.)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[16p-W2_401-3]Room-temperature luminescence lifetimes of high AlN mole fraction AlGaN alloys

〇Shigefusa Chichibu¹, Kohei Shima¹, Teppei Takehisa², Hiroshi Miwa³, Atsushi Miyazaki³, Shin-ya Boyama³, Yoshiki Saito³, Hisanori Ishiguro², Tetsuya Takeuchi² (1.Tohoku Univ., 2.Meijo Univ., 3.Toyoda Gosei Co. Ltd.)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W2_401-4]AlN Mole Fraction Dependence and Selective Etching Behavior of AlGaN Using Pressurized and Heated Water

〇Eri Matsubara¹, Yuma Miyamoto¹, Sho Iwayama¹, Hideto Miyake², Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W2_401-5]Wet Chemical Etching of Surface-Altered Layers Induced by Hot Pressurized Water Exfoliated Method in Vertical UV-B AlGaN LD Fabrication

〇(M1)Yuma Miyamoto¹, Takumu Saito¹, Yusuke Sasaki¹, Syundai Maruyama¹, Rintaro Miyake¹, Shogo Karino¹, Ryota Watanabe¹, Shion Kamiya¹, Seiya Kato¹, Naoki Kitta¹, Eri Matsubara¹, Sho Iwayama¹, Hideto Miyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[16p-W2_401-6]Deep-UV AlGaN Laser Diodes Employing Low-Resistivity n-type Ohmic Contacts

〇Kazuaki Ebata¹, Masanobu Hiroki¹, Seiya Kawasaki¹, Kouta Tateno¹, Kazuyuki Hirama¹, Yoshitaka Taniyasu¹ (1.NTT BRL)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W2_401-7]Ohmic Contact Formation on Both N-Polar and Metal-Polar n-Al_0.62Ga_0.38N

〇(M1)Ryota Watanabe¹, Takumu Saito¹, Rintaro Miyake¹, Shundai Maruyama¹, Shogo Karino¹, Yusuke Sasaki¹, Seiya Kato¹, Naoki Kitta¹, Yuma Miyamoto¹, Sion Kamiya¹, Sho Iwayama¹, Hideto Miyake², Yasuo Koide¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W2_401-8]Correlation between Crystal Defects and Device Performance Degradation in AlGaN-Based UV-B Laser Diodes

〇Seiya Kato¹, Takumu Saito¹, Rintaro Miyake¹, Shundai Maruyama¹, Yusuke Sasaki¹, Shogo Karino¹, Shion Kamiya¹, Naoki Kitta¹, Ryota Watanabe¹, Yuma Miyamoto¹, Sho Iwayama¹, Hideto Miyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W2_401-9]Improvement of optical gain characteristics in AlGaN UV-B laser diodes via low-temperature growth

〇Rintaro Kobayashi¹, Shundai Maruyama¹, Takumu Saito¹, Rintaro Miyake¹, Seiya Kato¹, Naoki Kitta¹, Ryota Watanabe¹, Yuma Miyamoto¹, Shion Kamiya¹, Tomoya Tanikawa¹, Kenta Kitagawa¹, Sho Iwayama¹, Hideto Miyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[16p-W2_401-10]Significant improvement of performance in AlGaN-based UV-B laser diodes via low-temperature growth

〇Takumu Saito¹, Rintaro Miyake¹, Shundai Maruyama¹, Yusuke Sasaki¹, Shogo Karino¹, Seiya Kato¹, Naoki Kitta¹, Ryota Watanabe¹, Yuma Miyamoto¹, Shion Kamiya¹, Sho Iwayama¹, Hideto Miyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W2_401-11]Wavelength extension and device characteristics of AlGaN-based UV-B LD via AlN mole fraction Control

〇Tomoya Tanikawa¹, Takumu Saito¹, Rintaro Miyake¹, Seiya Kato¹, Naoki Kitta¹, Ryota Watanabe¹, Shion Kamiya¹, Yuma Miyamoto¹, Rintaro Kobayashi¹, Kenta Kitagawa¹, Sho Iwayama¹, Hideto Miyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W2_401-12]Impact of Well/Guide Bandgap Difference on COD Characteristics of AlGaN-Based UV-B Laser Diodes

〇(B)Kenta Kitagawa¹, Takumu Saito¹, Rintaro Miyake¹, Naoki Kitta¹, Seiya Kato¹, Ryota Watanabe¹, Yuma Miyamoto¹, Shion Kamiya¹, Sho Iwayama¹, Hideto Miyake², Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W2_401-13]RT-CW Oscillation of a 318 nm AlGaN-Based Laser Diode on a Sapphire Substrate

〇(M2)Rintaro Miyake¹, Takumu Saito¹, Shogo Karino¹, Shion Kamiya¹, Ryota Watanabe¹, Syo Iwayama¹, Hideto Miyake², Koichi Naniwae³, Yoshito Jin⁴, Masamitsu Toramaru⁴, Tatsuya Matsumoto⁴, Yoshihiro Shimazaki⁴, Hironori Torii⁵, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ., 3.Ushio Inc, 4.JSW, 5.JSW Afty)

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W2_401-14]Thermal Resistance Reduction in AlGaN-Based UV-B LDs via Packaging Structure Optimization

〇Shion Kamiya¹, Takumu Saito¹, Rintaro Miyake¹, Shundai Maruyama¹, Yusuke Sasaki¹, Shogo Karino¹, Seiya Kato¹, Naoki Kitta¹, Ryota Watanabe¹, Yuma Miyamoto¹, Sho Iwayama¹, Hideto Miyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[16p-W2_401-15]Room Temperature p-type Activation of Mg-acceptor-doped Al0.8Ga0.2N by Electronic-Chemical Desorption of H impurities

〇Noritoshi Maeda

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[16p-W2_401-16]Merit and Demerit of Impurity-Band-Effect-Connection Hole Current Paths in Highly Al-compositional and Mg-heavily-doped AlGaN Layers in Devices

〇Noritoshi Maeda

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[16p-W2_401-17]Estimation for C-plane Distribution of Mg-Impurity-Band-Effect Connection Hole Current Paths through EL Peak Waveform of C-plane AlGaN-based LEDs

〇Noritoshi Maeda

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Session Details

[16p-W2_401-1~17]15.4 III-V-group nitride crystals

[16p-W2_401-1]Growth of thin GaN film on AlN prepared by sputtering and face-to-face annealing and higher efficiency of UVC-LEDs

[16p-W2_401-2]Strategies for fabricating long-lived 275-nm-band AlGaN QW LEDs

[16p-W2_401-3]Room-temperature luminescence lifetimes of high AlN mole fraction AlGaN alloys

[16p-W2_401-4]AlN Mole Fraction Dependence and Selective Etching Behavior of AlGaN Using Pressurized and Heated Water

[16p-W2_401-5]Wet Chemical Etching of Surface-Altered Layers Induced by Hot Pressurized Water Exfoliated Method in Vertical UV-B AlGaN LD Fabrication

[16p-W2_401-6]Deep-UV AlGaN Laser Diodes Employing Low-Resistivity n-type Ohmic Contacts

[16p-W2_401-7]Ohmic Contact Formation on Both N-Polar and Metal-Polar n-Al0.62Ga0.38N

[16p-W2_401-8]Correlation between Crystal Defects and Device Performance Degradation in AlGaN-Based UV-B Laser Diodes

[16p-W2_401-9]Improvement of optical gain characteristics in AlGaN UV-B laser diodes via low-temperature growth

[16p-W2_401-10]Significant improvement of performance in AlGaN-based UV-B laser diodes via low-temperature growth

[16p-W2_401-11]Wavelength extension and device characteristics of AlGaN-based UV-B LD via AlN mole fraction Control

[16p-W2_401-12]Impact of Well/Guide Bandgap Difference on COD Characteristics of AlGaN-Based UV-B Laser Diodes

[16p-W2_401-13]RT-CW Oscillation of a 318 nm AlGaN-Based Laser Diode on a Sapphire Substrate

[16p-W2_401-14]Thermal Resistance Reduction in AlGaN-Based UV-B LDs via Packaging Structure Optimization

[16p-W2_401-15]Room Temperature p-type Activation of Mg-acceptor-doped Al0.8Ga0.2N by Electronic-Chemical Desorption of H impurities

[16p-W2_401-16]Merit and Demerit of Impurity-Band-Effect-Connection Hole Current Paths in Highly Al-compositional and Mg-heavily-doped AlGaN Layers in Devices

[16p-W2_401-17]Estimation for C-plane Distribution of Mg-Impurity-Band-Effect Connection Hole Current Paths through EL Peak Waveform of C-plane AlGaN-based LEDs

[16p-W2_401-7]Ohmic Contact Formation on Both N-Polar and Metal-Polar n-Al_0.62Ga_0.38N