[16p-W2_401-1~17] 15.4 III-V-group nitride crystals

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[16p-W2_401-6] Deep-UV AlGaN Laser Diodes Employing Low-Resistivity n-type Ohmic Contacts

〇Kazuaki Ebata¹, Masanobu Hiroki¹, Seiya Kawasaki¹, Kouta Tateno¹, Kazuyuki Hirama¹, Yoshitaka Taniyasu¹ (1.NTT BRL)

Keywords:

AlGaN,Laser,Ohmic contact