[16p-W8E_307-1~11] 15.1 Bulk crystal growth

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[16p-W8E_307-5] 2 inch Crystal growth consideration ofβ-Ga2O3 with OCCC method

〇(D)Masanori Kitahara^1,2,3, Taketoshi Tomida³, Vladimir Kochurikhin³, Yasuhiro Shoji^2,3, Kei Kamada^2,3,4, Koichi Kakimoto¹, Akira Yoshikawa^1,3,4 (1.IMR, Tohoku Univ., 2.FOX Corp., 3.C&A Corp., 4.NICHe, Tohoku Univ.)

Keywords:

gallium oxide,semiconductor,crystal

To develop larger substrates for device applications, we performed beta-Ga₂O₃ crystal growth using water-cooled baskets with diameters of 70 to 150 mm. High-purity beta-Ga₂O₃ powder and sintered bodies (99.99% or higher) were used as starting materials. Growth experiments were carried out at frequencies from 300 kHz to 2 MHz, and repeated material loading enabled the formation of a stable melt environment that produced sintered bodies as shown in Fig.1. Using this process, we successfully obtained bulk beta-Ga₂O₃ single crystals larger than 2 inches. These results demonstrate the feasibility of crystal growth without precious-metal crucibles and indicate strong potential for further scale-up. Detailed characterization of the grown crystals, including structural properties, crystallinity, and impurity concentrations, will be reported during the session.