Presentation Information
[16p-W9_323-1]Vapor Transport Deposition of BaS/BaSi2 Heterojunction for Solar Cell Applications
〇(D)Asma Aktar1, Candell Grace P. Quino1, Itaru Raifuku2, Hidenori Kawanishi1, Yukiharu Uraoka1, Kosuke O. Hara1 (1.NAIST, 2.Aoyama Gakuin Univ.)
Keywords:
BaSi2,Vapor transport deposition,Heterointerface
BaSi2 is a promising solar-cell absorber with a suitable band gap (~1.3 eV), but its low electron affinity limits the use of conventional hole transport layers (HTLs). BaS is a suitable HTL due to favorable band alignment with BaSi2, and vapor transport deposition (VTD) enables continuous growth while suppressing interfacial oxidation. However, excess sulfur during VTD can introduce Si impurities at the BaS/BaSi2 interface. In this study, BaSi2 and BaS layers were sequentially deposited using BaAl4+Ni and Ag2S precursors with varying sulfur supply. XRD confirmed BaS/BaSi2 formation with minor oxidation, while Raman spectroscopy showed no Si impurities when the Ag2S amount was below 4.6 mg, demonstrating effective sulfur optimization.