[16p-W9_323-1~16] 13.2 Exploratory Materials, Physical Properties, Devices | The 73rd JSAP Spring Meeting 2026

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Session Details

Oral presentation13 Semiconductors : 13.2 Exploratory Materials, Physical Properties, Devices

[16p-W9_323-1~16]13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 16, 2026 1:00 PM - 6:30 PM JST
Mon. Mar 16, 2026 4:00 AM - 9:30 AM UTC

W9_323 (West Bldg. 9)

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)English Presentation

[16p-W9_323-1]Vapor Transport Deposition of BaS/BaSi₂ Heterojunction for Solar Cell Applications

〇(D)Asma Aktar¹, Candell Grace P. Quino¹, Itaru Raifuku², Hidenori Kawanishi¹, Yukiharu Uraoka¹, Kosuke O. Hara¹ (1.NAIST, 2.Aoyama Gakuin Univ.)

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[16p-W9_323-2]Evaluation of Hole Transport properties of HN-D2 thin films and
fabrication of HN-D2/BaSi₂ solar cells

〇Mizuki Hirai¹, Yuka Fukaya¹, Yoichiro Koda², Masami Mesuda², Takashi Suemasu¹ (1.Univ. of Tsukuba, 2.Tosoh Corporation)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)English Presentation

[16p-W9_323-3]Examination of 4H-SiC as ETL candidate material in BaSi₂ solar cells

〇Manuel Enrique Castillo¹, Koki Hayashi¹, Yoichiro Koda², Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Tsukuba Univ., 2.Tosoh Corp.)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[16p-W9_323-4]Investigation of HTL & ETL materials by simulation for BaSi₂ hetero-junction solar cells

〇Yuji Ishiguro¹, Sho Aonuki¹, Koki Hayashi¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[16p-W9_323-5]Synthesis and Characterization of Silicide Semiconductor Ba₂Ag_1-xCu_xSi₃ Thin Films with Ag-Cu Substitution

〇Taiga Shinohara¹, Kimimaru Kajihara¹, Yoichiro Koda², Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Tsukuba Univ., 2.Tosoh Corporation)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[16p-W9_323-6]Evaluation of Crystallinity of 50 mm-Diameter Mg₂Si Single Crystals by X-ray Rocking Curve Measurement

Kotaro Tetsu¹, Zenji Fujihisa¹, Kota Asakura², Kosuke Shimano¹, Shunya Sakane¹, Xin Liu², Noritaka Usami², 〇Haruhiko Udono¹ (1.Ibaraki Univ., 2.Nagoya Univ.)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[16p-W9_323-7]Evaluation of Segregation Behavior and Solubility Limit in Sb-doped Mg₂Si Single Crystals

〇Kosuke Shimano¹, Minoru Okawara¹, Shunya Sakane¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[16p-W9_323-8]Photosensitivity of Mg₂Si photodiodes featuring p-type graded layers in the SWIR

〇Ryosuke Furuta¹, Hibiki Kastumata¹, Yuuki Iino¹, Syunya Sakane¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W9_323-9]Mg₂Si PD Linear Array Fabrication and SWIR Imaging Demonstration

〇Yuki Iino¹, Hideto Takei¹, Yuya Tachimura¹, Hiroki Yamaguchi¹, Shunya Sakane¹, Takayuki Kimura¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[16p-W9_323-10]Nanocrystalline Mg2Si Thin Films Deposited by High-Power Impulse Magnetron Co-Sputtering Using Segmented Mg-Si Target

〇Daito Tanaka¹, Hyuga Kobayashi¹, Hiroharu Sugawara¹, Yuya Takahashi¹, Eitetsu Shimizu¹, Tatsuro Hanajiri², Keiichi Yanagisawa², Fumitaka Sakamoto² (1.SD, Tokyo Metro U., 2.Toyo Univ.)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[16p-W9_323-11]Electrical and Optical characteristics of epitaxial Mg₃Sb₂/Si

〇Shunya Sakane¹, Nozomu Kiridoshi¹, Ryosuke Kobayashi¹, Akito Ayukawa¹, Koki Nejo¹, Takeru Kuriyama¹, Wakaba Yamamoto², Akira Yasuhara², Kohei Sato², Haruhiko Udono¹ (1.Ibaraki Univ., 2.JEOL)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[16p-W9_323-12]Fabrication of mesa-type β-FeSi₂ pn homojunction devices using photolithography

〇Aoi Matsumoto¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[16p-W9_323-13]Synthesis and structural and electrical properties of In doped type II Ge clathrate films

〇Sora Tajima¹, Koji Yasuoka¹, Tun Naing Aye², Kousuke Shimano⁴, Akito Ayukawa⁴, Syunya Sakane⁴, Haruhiko Udono⁴, Rahul Kumar³, Himansyu Jha^1,2, Fumitaka Ohashi^1,2, Tetsuji Kume^1,2 (1.GNST, Gifu Univ., 2.Faculty of Engineering, Gifu Univ., 3.NIT, Gifu College, 4.Faculty of Engineering, Ibaraki Univ.)

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[16p-W9_323-14]Synthesis of Guest-Free Silicon Clathrates via Sodium Removal Using Metal Chlorides

〇ISSEI SUZUKI¹, Kako Washizu¹, Haruhiko Morito¹, Takahisa Omata¹ (1.Tohoku Univ.)

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[16p-W9_323-15]Ab Initio Spectral Function Calculations of Nickel Disilicide with Full-Frequency GW approximation

〇Jun Inagaki¹ (1.HiSOR)

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[16p-W9_323-16]Multistability of Interstitial Magnesium and Its Carrier Recombined Migration in Gallium Nitride

〇Yuansheng Zhao^1,2,3, Kenji Shiraishi^1,4, Tetsuo Narita⁵, Atsushi Oshiyama^1,4 (1.IMASS Nagoya Univ., 2.QUEMIX, Inc., 3.Univ. of Tokyo, 4.CIES Tohoku Univ., 5.Toyota CRDL, Inc)

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Session Details

[16p-W9_323-1~16]13.2 Exploratory Materials, Physical Properties, Devices

[16p-W9_323-1]Vapor Transport Deposition of BaS/BaSi2 Heterojunction for Solar Cell Applications

[16p-W9_323-2]Evaluation of Hole Transport properties of HN-D2 thin films andfabrication of HN-D2/BaSi2 solar cells

[16p-W9_323-3]Examination of 4H-SiC as ETL candidate material in BaSi2 solar cells

[16p-W9_323-4]Investigation of HTL & ETL materials by simulation for BaSi2 hetero-junction solar cells

[16p-W9_323-5]Synthesis and Characterization of Silicide Semiconductor Ba2Ag1-xCuxSi3 Thin Films with Ag-Cu Substitution

[16p-W9_323-6]Evaluation of Crystallinity of 50 mm-Diameter Mg2Si Single Crystals by X-ray Rocking Curve Measurement

[16p-W9_323-7]Evaluation of Segregation Behavior and Solubility Limit in Sb-doped Mg2Si Single Crystals

[16p-W9_323-8]Photosensitivity of Mg2Si photodiodes featuring p-type graded layers in the SWIR

[16p-W9_323-9]Mg2Si PD Linear Array Fabrication and SWIR Imaging Demonstration