[16p-W9_323-1~16] 13.2 Exploratory Materials, Physical Properties, Devices

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[16p-W9_323-8] Photosensitivity of Mg₂Si photodiodes featuring p-type graded layers in the SWIR

〇Ryosuke Furuta¹, Hibiki Kastumata¹, Yuuki Iino¹, Syunya Sakane¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

Keywords:

Mg2Si,SWIR,photosensitivity