[16p-W9_324-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[16p-W9_324-14] Demonstration of β-Ga₂O₃ crystal growth by pulling-down EFG method with a raw material supply system

〇Yuki Ueda¹, Kimiyoshi Koshi¹, Sho Hasegawa¹, Kohei Sasaki¹, Akito Kuramata¹ (1.NCT)

Keywords:

Ga2O3,EFG method,Bulk crystal