[16p-W9_324-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices" | The 73rd JSAP Spring Meeting 2026

Session Details

Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16p-W9_324-1~17]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Mar 16, 2026 1:30 PM - 6:30 PM JST
Mon. Mar 16, 2026 4:30 AM - 9:30 AM UTC

W9_324 (West Bldg. 9)

1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[16p-W9_324-1][The 47th Best Review Paper Award Speech] Prospects for β-Ga₂O₃: now and into the future

〇Kohei Sasaki¹ (1.Novel Crystal Technology)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[16p-W9_324-2]Fast rate growth of (001) β-Ga₂O₃ films by cold-wall MOCVD

〇(PC)Shun Ukita¹, Hironori Okumura¹ (1.Univ. Tsukuba)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[16p-W9_324-3]Rapid homoepitaxial growth of (011) β-Ga₂O₃ by HCl-based halide vapor phase epitaxy

〇Yuichi Oshima¹, Takayoshi Oshima¹ (1.NIMS)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)English Presentation

[16p-W9_324-4]Epitaxial Growth of Gallium Oxide (1):
High-Density Oxygen Radical Source (HD-ORS) for MBE and PVD

〇(P)Michael Mo¹, Arun Kumar Dhasiyan¹, Nikolay Britun¹, Naohiro Shimizu¹, Osamu Oda^1,2, Masaru Hori¹ (1.Nagoya Univ., CLPS, 2.NU-Rei, Inc.)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)English Presentation

[16p-W9_324-5]Epitaxial Growth of Gallium Oxide (2): Homoepitaxial Growth of β-Ga₂O₃ on Sn-doped Ga₂O₃ Substrates Using a Novel High-Density Oxygen Radical Source (HD-ORS) for MBE

〇ArunKumar Dhasiyan¹, Tomoki Takeda², Naofumi Kato², Naohiro Shimizu¹, Osamu Oda^1,2, Masaru Hori¹ (1.Nagoya Univ., CLPS, 2.NU-Rei, Inc.)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[16p-W9_324-6]Epitaxial Growth of Gallium Oxide (3):Homoepitaxial Growth of β-Ga₂O₃ on Sn-doped Ga₂O₃ Substrates Using a Novel High-Density Oxygen Radical Source (HD-ORS) for PVD

〇Tomoki Takeda², Naofumi Kato², Arun Kumar Dhasiyan¹, Naohiro Shimizu¹, Osamu Oda^1,2, Masaru Hori¹ (1.Nagoya Univ., CLPS, 2.NU-Rei, Inc.)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[16p-W9_324-7]Epitaxial Growth of Gallium Oxide (4):Wet-Etching and Langmuir Adsorption for Preventing the Oxidations of Si substrates Prior to Epitaxial Growth

〇Osamu Oda^1,2, Arun Kumar Dhasiyan¹, Tomoki Takeda², Naofumi Kato², Naohiro Shimizu¹, Masaru Hori¹ (1.Nagoya Univ., cLPS, 2.NU-Rei, Inc.)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)English Presentation

[16p-W9_324-8]Epitaxial Growth of Gallium Oxide (5): Hetero-Epitaxial Growth of Ga₂O₃ on Si (100) Substrates

〇ArunKumar Dhasiyan¹, Tomoki Takeda², Naofumi Kato², Naohiro Shimizu¹, Osamu Oda^1,2, Masaru Hori¹ (1.Nagoya Univ., CLPS, 2.NU-Rei, Inc.)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[16p-W9_324-9]Epitaxial Growth of Gallium Oxide (6):Consideration of NiO diffusion layers for the creation of p-type Ga-based semiconductors

〇Naohiro Shimizu¹, Arun Kumar Dhasiyan¹, Osamu Oda^1,2, Ikarashi Nobuyuki¹, Masaru Hori¹ (1.Nagoya Univ., 2.NU-Rei, Inc.)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[16p-W9_324-10]Homoepitaxial growth of thick β-Ga₂O₃ layers on 2-inch β-Ga₂O₃(010) substrates by low-pressure hot-wall MOVPE

〇Yoshiki Iba¹, Yuma Terauchi¹, Junya Yoshinaga^1,2, Yasuhiro Hashimoto³, Yoshinao Kumagai¹ (1.Tokyo Univ. of Agric. and Tech., 2.TAIYO NIPPON SANSO CORPORATION, 3.Sumitomo Metal Mining Co., Ltd.)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[16p-W9_324-11]Homoepitaxial growth of Si doped β-Ga₂O₃(010) layers by THVPE methods

〇Haruki Kitagawa¹, Naoki Yoshida¹, Hisashi Murakami¹, Yoshinao Kumagai² (1.AIS Tokyo Univ. of Agric. And Tech., 2.Dept. of Appl. Chem., Tokyo Univ. of Agric. And Tech.)

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[16p-W9_324-12]Primary crystal orientations of β-Ga₂O₃ with respect to the oxygen sublattice

〇Takayoshi Oshima¹ (1.NIMS)

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[16p-W9_324-13]HCl-based halide vapor phase epitaxy and HCl gas etching on β-Ga₂O₃ with a surface orientation close to (011)

〇Takayoshi Oshima¹, Yuichi Oshima¹ (1.NIMS)

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[16p-W9_324-14]Demonstration of β-Ga₂O₃ crystal growth by pulling-down EFG method with a raw material supply system

〇Yuki Ueda¹, Kimiyoshi Koshi¹, Sho Hasegawa¹, Kohei Sasaki¹, Akito Kuramata¹ (1.NCT)

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[16p-W9_324-15]Development of high-quality 4’’ β-Ga₂O₃ (010) substrates via the VB method

〇Toshinori Taishi¹, Yuki Yamamoto², Shigenori Shimizu², Kensuke Mizukoshi³, Takashi Nishinoiri³, Keigo Hoshikawa¹ (1.Shinshu Univ., 2.Oxide Corp., 3.Ceratec Japan Corp.)

6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[16p-W9_324-16]Evaluation on distribution of line-shaped voids in [010] β-Ga₂O₃ grown by the VB method

Ukyo Miyagi¹, 〇Toshinori Taishi¹, Keigo Hoshikawa¹ (1.Shinshu Univ.)

6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[16p-W9_324-17]Evaluation of dissolution behavior of β-Ga₂O₃ for isotropic etching

〇Aoi Otsuka¹, Taro Tsukada¹, Toshinori Taishi¹ (1.Shinshu Univ.)

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