[16p-W9_326-1~11] 3.12 Semiconductor optical devices

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W9_326-2] Investigation of buried ridge waveguide structure of 1-µm-band InGaAs/GaAs membrane lasers

〇(M1)Shun Ito¹, Yoshitaka Oiso¹, Keigo Imagawa¹, Nobuhiko Nishiyama^1,2 (1.Science Tokyo, 2.NEX-SECC)

Keywords:

semiconductor laser,membrane laser

Semiconductor membrane lasers are promising candidates for future optical chiplets and on-chip optical interconnects as high-efficiency, low-power directly modulated light sources. However, the use of conventional InP-based lasers is challenging in close proximity to electronic circuits, where temperatures can exceed 100°C. Therefore, to realize membrane lasers incorporating 1-µm band InGaAs, which has proven superior high-temperature characteristics, we designed a buried ridge structure that achieves both optical confinement and low electrical resistance. We report on these design results.