[16p-W9_327-1~16] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W9_327-1] Fabrication of amorphous ternary Ge-Sn-S thin films by vacuum evaporation for the selector application

〇(M1C)Daiki Inose¹, Mihyeon Kim¹, Shogo Hatayama², Yuta Saito^1,2,3 (1.Tohoku Univ., 2.SFRC, AIST, 3.GXT, Tohoku Univ.)

Keywords:

selector,vacuum evaporation,amorphous chalcogenide

To create novel selector materials composed of amorphous chalcogenides, research and development were conducted on Ge-Sn-S ternary amorphous thin films, aiming for high thermal stability and low threshold voltage. Films were deposited by vacuum evaporation and RF sputtering, followed by heat treatment under an Ar flow. XRD measurements were performed on the resulting films to evaluate their thermal stability, revealing significant differences in crystallization behavior depending on composition. The Ge₂₇Sn₁₇S₅₆ film remained amorphous up to 300°C and crystallized upon heat treatment at 400°C.