[16p-WL2_101-1~11] 6.4 Thin films and New materials

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-WL2_101-7] Light-programmable reorientation of the crystallographic c axis of Tellurium thin films

〇Yuta Kobayashi¹, Arata Mitsuzuka¹, Haruo Kondo¹, Makoto Shoshin¹, Jun Uzuhashi², Tadakatsu Ohkubo², Masamitsu Hayashi¹, Masashi Kawaguchi¹ (1.Univ. Tokyo, 2.NIMS)

Keywords:

tellurium,anisotropic materials,ultrashort laser pulses

In this presentation, we report a method for manipulating the c-axis orientation of Te thin films using linearly polarized pulsed laser. In a polycrystalline Te film, linear dichroism enhances light absorption in nanocrystals whose c axis is aligned with the incident polarization. This anisotropic absorption drives selective laser-induced melting, followed by recrystallization that reorients the crystallographic texture. Consequently, the Te c axis is driven to align perpendicular to the laser polarization. By simply rotating the polarization, this method provides in-plane omnidirectional and reversible crystallographic control.