[17a-M_110-1~13] 3.4 Laser system and materials

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-M_110-4] Quantitative analysis of DUV-induced absorption in CsLiB₆O₁₀ crystals

〇Ryunouske Oura¹, Kotaro Morita¹, Tomoaki Nambu¹, Ryota Murai², Yoshinori Takahashi², Hironori Igarashi³, Yusuke Mori^2,4, Masashi Yoshimura^1,2 (1.ILE., The Univ of Osaka., 2.SOSHO CHOKO Inc., 3.Gigaphoton Inc., 4.Grad. Sch. of Eng., The Univ of Osaka)

Keywords:

DUV,nonlinear optical crystals,two-photon-absorption

We quantitatively investigated the mechanism of deep-ultraviolet (DUV)-induced absorption in CsLiB₆O₁₀ (CLBO) crystals, a phenomenon that limits the power scaling of solid-state DUV light sources. A novel evaluation method was developed by combining crystal scanning along the optical axis with a numerical calculation model to characterize the spatial distribution of the absorption coefficient. Our analysis revealed that the increase in the absorption coefficient is proportional to the square of the light intensity, suggesting that absorption defects are formed via two-photon absorption. Based on these findings, we defined a new coefficient, η_tpi (two-photon-induced), to quantify the susceptibility to defect formation.