Presentation Information
[17a-M_110-8]Proposal of AlN deep ultraviolet second harmonic generation device using refractive index control
〇(B)Shuto Yamada1, Tomoaki Nambu1, Koji Usami2, Hisashi Ogawa2, Masahiko Sano2, Masashi Yoshimura1 (1.ILE, Osaka Univ., 2.Nichia Corp.)
Keywords:
wavelength conversion,quasi phase matching,second harmonic generation
To realize a compact and highly efficient deep-ultraviolet (DUV) laser light source, we propose a quasi-phase-matched (QPM) second-harmonic generation (SHG) device applicable to AlN.
The QPM structure is realized by periodically arranging nonlinear AlN regions and linear regions composed of amorphous materials.
By employing atomic layer deposition (ALD)–based mixed thin-film deposition, the refractive index of the linear regions is tailored to be close to that of AlN, which is expected to reduce diffraction losses.
Furthermore, a waveguide structure with m-plane sidewalls and ramp-shaped refractive-index interfaces is expected to suppress waveguide scattering and higher-order diffraction components.
The QPM structure is realized by periodically arranging nonlinear AlN regions and linear regions composed of amorphous materials.
By employing atomic layer deposition (ALD)–based mixed thin-film deposition, the refractive index of the linear regions is tailored to be close to that of AlN, which is expected to reduce diffraction losses.
Furthermore, a waveguide structure with m-plane sidewalls and ramp-shaped refractive-index interfaces is expected to suppress waveguide scattering and higher-order diffraction components.