Presentation Information
[17a-M_123-11]High-Density OTFT Backplanes Fabricated by a Low-Temperature, Ambient-Pressure Printing Process and Demonstrated for Electrophoretic Display Driving
〇YASUNORI TAKEDA1,2, Miho Abiko1, Kaori Watanabe1, Ryoko Horie1, Yasutaka Nakamura3, Junghwi Lee3, Shinya Oku3 (1.INOEL, Yamagata Univ., 2.Grad. School of Org. Mater. Sci., Yamagata Univ., 3.Tosoh Corp.)
Keywords:
Printed Electronics,Organic Transistor,e-paper
Printed electronics, which enables low-environmental-impact manufacturing without vacuum or high-temperature processes, is a promising approach; however, display backplanes require the simultaneous achievement of fine wiring, reliable interlayer interconnections, and device uniformity. In this study, we fabricated a high-density OTFT backplane on a PEN film at atmospheric pressure with a maximum process temperature of 160 oC, based on reverse-offset printing, and demonstrated end-to-end integration up to e-paper driving using a 240 x 146 pixel (133.7 dpi) backplane. An IPA rinse reduced surface-derived residues on the printed electrodes, improving interfacial compatibility with subsequent layers. We further showed that the via sidewall taper angle governs conformal coverage; a gentler taper (23.8 deg) was effective in improving interlayer connection yield for fine vias. The OTFTs exhibited representative performance with mobility on the order of 1 cm2/Vs and an ON/OFF ratio > 108, confirming practical switching operation. These results verify that the proposed low-temperature, atmospheric-pressure printing process is applicable to high-density backplanes and their implementation in display devices.