[17a-M_135-1~10] 1.3 Novel technologies and interdisciplinary engineering

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[17a-M_135-7] Evaluation for I-L Characteristics of Laser Diodes with Facedown Mounting

〇Yoshinobu Kawaguchi¹, Kiyoto Taniguchi¹, Taro Itatani², Akihiro Noriki², Joji Maeda¹, Takeru Amano² (1.TUS, 2.AIST)

Keywords:

semiconductor lasers,I-L Characteristics

In recent years, information processing systems in data centers have sought to achieve lower power consumption and higher speeds by introducing Co-Packaged Optics (CPO). When semiconductor lasers are integrated and mounted using CPO, challenges arise such as reduced optical output due to characteristic degradation. This report evaluates a face-down configuration where the p-type electrode directly above the active layer contacts the heat spreader to shorten the distance from the active layer to the heat spreader and promote heat dissipation.