[17a-M_178-1~13] 17.3 Layered materials

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[17a-M_178-1] [The 59th Young Scientist Presentation Award Speech] Magnetic Control of the Topological Magnetic Material Cr₃Te₄ via Ion Gating

〇Kanta Endo¹, Hideki Matsuoka^2,3, Yoshihiro Iwasa^3,1, Masaki Nakano^1,3,4 (1.Dept. of Appl. Phys. the Univ. of Tokyo, 2.Inst. of Ind. Sci. the Univ. of Tokyo, 3.RIKEN CEMS, 4.Coll. of Eng., Shibaura Inst. of Technol.)

Keywords:

Topological Hall effect,ion-gating,van der Waals magnet

Topological magnetic structures are attracting attention as information carriers for next-generation spintronics capable of low-current operation. We have discovered the emergence of the topological Hall effect (THE) at room temperature and zero magnetic field in thermally treated van der Waals ferromagnetic Cr₃Te₄ thin films. In this presentation, we report gate control of the THE via Li intercalation using an ion-gating method. This enables complete switching between the topological magnetic phase and the ferromagnetic phase, and we discuss its physical origin.