Presentation Information
[17a-PA2-5]Effect of TiO2 buffer layers on the growth of crystalline VO2 films on glass substrates for optical switching applications
〇(M1)RYOHEI WAKAYAMA1, Md. Suruz Miya1, Kunio Okimura1 (1.Tokai Univ)
Keywords:
Vanadium dioxide,Titanium dioxide,Smart window
VO2 is a material exhibiting an insulator-metal transition (IMT) at approximately 68°C. In this study, TiO2, which exhibits excellent high-temperature stability, was used as a buffer layer to evaluate the growth characteristics of VO2 thin films. TiO2/VO2 thin films were fabricated by sputtering, and thickness dependence was investigated. Results showed that at a film thickness of 240 nm, the resistance transition width improved by approximately 2.5 orders of magnitude, and improved crystallinity was confirmed by XRD. Similar results were observed in infrared transmission characteristics compared to conventional ZnO buffer layers, demonstrating the effectiveness of the TiO2 buffer layer.