Presentation Information
[17a-PA3-1]Impact of 172-nm Excimer-Light Irradiation Atmosphere on the Surface Properties of GaAs and the Rectifying Characteristics of Au/GaAs Schottky Barrier Diodes
〇Haruto Monda1, Kazuki Ueda1, Takuya Nomura1, Takayuki Hasegawa1, Hideo Wada1, Masatoshi Koyama1, Akihiko Fujii1, Akihiro Shimizu2, Toshihiko Maemoto1 (1.Osaka Inst. of Tech., 2.Ushio Inc.)
Keywords:
Excimer light surface modification,GaAs schottky barrier diode,Interface control
This study aims to improve the high-frequency response of GaAs Schottky barrier diodes by proposing an interface modification method using excimer-light irradiation. Irradiation in ambient air resulted in a significant increase in the built-in potential due to interface oxidation and the formation of a metal–insulator–semiconductor (MIS) structure. In contrast, irradiation under a nitrogen atmosphere effectively suppressed interfacial oxidation, leading to stable rectifying characteristics and improved interface stability. By enabling precise control of surface and interface properties through light-assisted atmospheric control, the proposed method is considered an effective surface treatment technique for realizing high-efficiency rectennas and high-speed detection devices.