Presentation Information
[17a-PB1-11]Influence of growth temperature on Ga/Sn composition ratio in GTO films
〇(M1)Syuto Toyooka1,2, Isao Takahashi2,3, Tokiyoshi Matsuda1, Kentaro Kaneko2,3 (1.Grad. Sch. of Sci. and Eng., Kindai Univ, 2.ROST, Ritsumeikan Univ, 3.RISA, Ritsumeikan Univ)
Keywords:
semiconductor,thin film,temperature
Ga-Sn-O (GTO) is a transparent oxide semiconductor that has attracted considerable attention for applications in thin-film transistors and memristors; however, precise control of the Ga/Sn composition ratio in GTO thin films remains a critical issue. In this study, the effect of growth temperature on the composition of GTO thin films deposited by mist chemical vapor deposition was systematically investigated. The results revealed that the film composition strongly depends on the growth temperature, indicating that growth temperature is the dominant control factor for the Ga/Sn ratio. Furthermore, the Ga/Sn composition ratio in the films was found to coincide with that of the precursor solution at a growth temperature of approximately 500 °C.