Presentation Information
[17a-PB1-16]Solid-state synthesis of Cr-doped V2O3 thin films towards realizing the metal-insulator transition at room temperature
〇(B)Josei Fujiwara1, Yuki Kinoshita1, Takuto Soma1, Akira Ohtomo1, Kohei Yoshimatsu1 (1.Science Tokyo)
Keywords:
transition metal oxides,metal-insulator transition,V2O3
Approximately 1% Cr-doped V2O3 undergoes a metal-insulator transition (MIT) from a low-temperature paramagnetic metal (PM) phase to a high-temperature paramagnetic insulator (PI) phase near room temperature; however, this transition disappears in thin-film form. We attribute the suppression of the MIT to (i) deviations in the [Cr]/[V] composition arising from high-temperature thin-film growth under vacuum and (ii) compressive epitaxial strain imposed by the substrate. To address these issues, we fabricated thin films using a reactive solid-state synthesis approach that combines room-temperature deposition for accurate composition transfer with post-annealing for crystallization. The resulting films were characterized by X-ray diffraction and evaluated through electrical transport measurements.