Presentation Information
[17a-PB1-21]Fabrication of High Quality NbO2 Thin Films for Ultra High Temperature Switching and Their Electric Field Induced Switching Characteristics
〇(B)Maya Umezaki1, Haobo Li1,2, Hidekazu Tanaka1,2 (1.SANKEN, The Univ. of Osaka, 2.OTRI, The Univ. of Osaka)
Keywords:
strongly correlated system,metal insulator transition
We focus on NbO2 as an ultra-high-temperature Beyond CMOS switching material and fabricate thin films on single-crystal substrates by pulsed-laser deposition (PLD). We optimize the growth conditions to improve crystallinity and phase purity, evaluated by X ray diffraction (XRD) and Raman spectroscopy, and investigate electric-field- and current-induced resistive switching in the fabricated devices.