[17a-PB1-1~32] 6.3 Oxide electronics

[17a-PB1-4] Two-terminal mode leaky-integration operation of freestanding SrTiO₃ channel FETs

〇Kosuke Tanaka^1,2, Hisashi Inoue¹, Ai Kitoh¹, Masafumi Tamura², Isao H. Inoue^1,2 (1.AIST, 2.Tokyo Univ. Science)

Keywords:

complex oxide,freestanding,field effect transistor

We report the two-terminal mode leaky-integration operation of freestanding SrTiO₃ channel FETs. While we previously developed this FET for three-terminal neuromorphic applications utilizing oxygen vacancy drift-diffusion, realizing two-terminal operation in the same device offers simplified control. The device features a Parylene C/HfO₂ gate insulator on a SrTiO₃ membrane fabricated via a water-soluble Sr₄Al₂O₇ sacrificial layer. We observed that under a fixed gate voltage, applying a train of drain voltage pulses caused a gradual increase in drain current amplitude. This modulation indicates a time-dependent decrease in channel resistance, successfully mimicking the leaky-integration function of biological neurons in a two-terminal configuration. The capability to utilize both operation modes in a single device paves the way for flexible and energy-efficient neuromorphic systems. We will also discuss the operation mechanism based on drift-diffusion simulations.