[17a-PB1-1~32] 6.3 Oxide electronics

[17a-PB1-9] Fabrication of La₄Ni₃O₁₀ thin film using pulsed laser deposition

〇Souma Kodani¹, Ryo Matsumoto², Eiji Hitsuda^2,3, Kouki Ishida¹, Hiroto Tanoue¹, Yoshihiko Takano^2,3, Hiromi Tanaka¹ (1.NIT, Yonago College, 2.NIMS, 3.Tsukuba Univ.)

Keywords:

superconductivity,thin film,nickelate

We attempted to fabricate La₄Ni₃O₁₀ nickelate thin films using the pulsed laser deposition (PLD) method, aiming to achieve epitaxial growth of the material, which exhibits superconductivity under high pressure. By investigating the deposition conditions on LaAlO₃ substrates, (00l) peaks of La₄Ni₃O₁₀ were obtained as the main phase in XRD measurements, suggesting a high degree of c-axis orientation. Furthermore, post-deposition ozone annealing reduced the electrical resistance by approximately 39%. This result suggests a reduction in oxygen vacancies within the thin film due to the ozone treatment.