[17a-S2_201-1~13] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)English Presentation

[17a-S2_201-9] [The 47th Young Scientist Award Speech] Formation and contact resistivity of Sc germanosilicides on Si_1-xGe_x:B

〇Bert Pollefliet^1,2, Clement Porret², Jean-Luc Everaert², Kiroubanand Sankaran², Olivier Richard², Thierry Conard², Han Han², Anja Vanleenhove², Roger Loo^2,3, Christophe Detavernier³, Andre Vantomme¹, Clement Merckling^1,2 (1.KU Leuven, 2.imec, 3.Ghent Univ.)

Keywords:

CMOS,metal/semiconductor contact,silicide

One of the key bottlenecks to enable further performance improvements in CMOS devices is the contact resistance at the interface between the source/drain regions and metal contacts of a transistor. Sc, combined with low temperature epitaxial P-doped Si, was identified as an excellent NMOS contact. In this work, the potential of Sc as a CMOS compatible contact metal is assessed by investigating the structural properties and contact resistivity of Sc germanosilicides on highly B-doped epitaxial Si_1-xGe_x:B. In situ X-ray diffraction is used to investigate phase transitions as a function of temperature. The formed Sc germanosilicides depends on the Ge content (x) in the Si_1-xGe_x:B layer. For this material system, x should be limited to prevent the simultaneous formation of multiple germanosilicide phases which degrades the resulting contact resistivity. On Si_0.7Ge_0.3:B, a single orthorhombic germanosilicide phase can be formed, which matches the performance of the Ti reference.