[17a-S4_203-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)English Presentation

[17a-S4_203-3] Ar/N₂ gas flow ratio dependence on the ferroelectric HfN_x formation utilizing ECR-plasma sputtering

〇KANGBAI LI¹, Shun-ichiro Ohmi¹ (1.Science Tokyo)

Keywords:

hafnium nitride,ferroelectric,gas flow ratio

The ferroelectric HfO₂ (Fe-HfO₂) thin film has captured considerable interest due to its ferroelectric properties. However, the unavoidable formation of a SiO_x interfacial layer induces the depolarization field and degrades the memory device characteristics for Fe-HfO₂. We have investigated the ferroelectric HfN_x (Fe-HfN_x) thin film formation on Si(100) without interfacial layer formation. Although the ferroelectric properties of Fe-HfN_x were realized, ferroelectric characteristics are necessary to be improved.
In this research, we investigated the influence of Ar/N₂ gas flow ratio on the ferroelectric characteristics of Fe-HfN_x thin film.