The 73rd JSAP Spring Meeting 2026
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Session Details

Oral presentation13 Semiconductors : 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[17a-S4_203-1~11]13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Tue. Mar 17, 2026 9:00 AM - 12:00 PM JST
Tue. Mar 17, 2026 12:00 AM - 3:00 AM UTC
S4_203 (South Bldg. 4)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[17a-S4_203-1]Investigation of structural evaluation methods for amorphous SiO2 thin films on Si substrates using X-ray and electron PDF analysis

〇Takanori Itoh1, Shusaku Ogyu1, Toshihiro Asada1, Yuji Shiramata2,3, Koji Ohara3 (1.NISSAN ARC, LTD., 2.Rigaku, 3.Shimane Univ.)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-S4_203-2]Analysis of the initial oxidation process on TiN surface by first-principles calculations
-Termination structure on surface and influence of N vacancy-

〇Yo Matsunaga1, Kenta Arima1, Kouji Inagaki1 (1.U Osaka)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)English Presentation

[17a-S4_203-3]Ar/N2 gas flow ratio dependence on the ferroelectric HfNx formation utilizing ECR-plasma sputtering

〇KANGBAI LI1, Shun-ichiro Ohmi1 (1.Science Tokyo)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[17a-S4_203-4]Shell Thickness Dependence of the Optical Bandgap of ZnSe/ZnS Core/Shell Quantum Dots: Tight-Binding Analysis

〇Jinhyong Lim1, Nobuya Mori1 (1.UOsaka)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-S4_203-5]Study of Micro-electrode Patterns on the Control of the Electroplated Metal Deposition toward MEMS Device Fabrication

〇Kota Sakanashi1, Tomoyuki Kurioka1, Katsuyuki Machida1, Chen Chun-Yi1, Chang Tso-Fu Mark1, Yoshihiro Miyake1, Hiroyuki Ito1, Masato Sone1 (1.Science Tokyo)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[17a-S4_203-6]Quantum Transport Simulation with Dissipation and Scattering Using Quantum Circuits

〇SATOFUMI SOUMA1 (1.Kobe Univ.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[17a-S4_203-7]Nonewuilibrium Green Function Simulation of Impact Ionization in a One-Dimensonal Model

〇Kazuma Takaoka1, Hajime Tanaka1,2, Nobuya Mori1 (1.Osaka Univ., 2.Kwansei Univ.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[17a-S4_203-8]Theoretical Calculation of Mobility Anisotropy in (111) Ge Double-Gate MOSFETs

〇Koichi Fukuda1, Junichi Hattori1, Tatsuro Maeda1 (1.AIST)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[17a-S4_203-9]Development of a Three-Dimensional Monte Carlo Device Simulator with Online Machine Learning for Enhanced Generality

〇(M1)Yusuke Otsuki1, Nobuya Mori1 (1.Osaka Univ.)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-S4_203-10]Simulation and Modelling of Single Event Upset in CFET SRAM

〇(BC)Vanness Filbert Cierra1, Yoshinari Kamakura1 (1.Osaka Inst. Tech.)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[17a-S4_203-11]Reconsideration of Misconception of Drain Current Saturation for MOSFETs

〇Naoyuki Shigyo1 (1.Free Engineer)
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