[17a-S4_203-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[17a-S4_203-7] Nonewuilibrium Green Function Simulation of Impact Ionization in a One-Dimensonal Model

〇Kazuma Takaoka¹, Hajime Tanaka^1,2, Nobuya Mori¹ (1.Osaka Univ., 2.Kwansei Univ.)

Keywords:

device simulation,noequiliblium green function,impactionization

A method for simulating impact ionization processes in Avalanche Photodiodes (APDs) using the Non-Equilibrium Green's Function (NEGF) method has been proposed. In such studies, the impact ionization of holes generated by electron-initiated impact ionization was neglected to analyze factors such as the dead-space width in APDs. In this study, aiming to analyze avalanche breakdown in power devices, we performed simulations using a simplified one-dimensional model that takes into account the impact ionization of secondary carriers.