Presentation Information
[17a-W2_401-6]Recombination Dynamics Analysis by Spectrally and Time-Resolved TRPL in GaN with Different Impurity Concentrations
Keita Ikebe1, Osuke Ito2, Kotaro Akiyama2, Yuta Sakura2, Shota Kaneki3, Hajime Fujikura3, Kazunori Iwamitsu1, Zentaro Akase1, Atsushi A. Yamaguchi2, 〇Shigetaka Tomiya1 (1.NAIST, 2.KIT, 3.Sumitomo Chemical)
Keywords:
Nitride Semiconductors,Spectrally and Time-Resolved Photoluminescence,Bayesian Analysis
Spectrally and time-resolved photoluminescence measurements were performed on GaN single crystals with different impurity concentrations to analyze their recombination dynamics. The results revealed that the decay behavior strongly depends on the emission wavelength, indicating that the recombination processes cannot be described by a single carrier lifetime. By applying a stretched exponential model combined with Bayesian inference, recombination dynamics were quantitatively evaluated while explicitly accounting for parameter uncertainties. The wavelength dependence of the estimated exponent parameter β reflects the broad distribution of recombination lifetimes and captures the inhomogeneity of recombination processes in GaN crystals. These findings suggest that β can serve as an effective physical indicator of crystal quality, particularly when impurity concentration is high.