[17a-W2_401-1~9] 15.4 III-V-group nitride crystals | The 73rd JSAP Spring Meeting 2026

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Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[17a-W2_401-1~9]15.4 III-V-group nitride crystals

Tue. Mar 17, 2026 9:00 AM - 11:30 AM JST
Tue. Mar 17, 2026 12:00 AM - 2:30 AM UTC

W2_401 (West Bldg. 2)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[17a-W2_401-1]Research steps for the control of phonon transport and electron-phonon interaction in III-nitrides

〇Yoshihiro Ishitani¹ (1.Chiba Univ.)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[17a-W2_401-2]Study on nonradiative electron-hole recombination rate in GaN quantum well structures by phononic-excitonic-radiative model

〇Yoshihiro Ishitani¹, Masaya Chizaki¹ (1.Chiba Univ.)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[17a-W2_401-3]Analysis of anti-Stokes phonon replica of excitonic radiation in GaN

〇Ryo Moteki¹, Kensaku Ito¹, Bei Ma¹, Hideto Miyake², Yoshihiro Ishitani¹ (1.Chiba Univ., 2.Mie Univ.)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[17a-W2_401-4]Time-Resolved Heat Transport Measurements of GaN Thin Film Using Pump-Probe Raman Spectroscopy with a Two-Wavelength Sub-Nanosecond Pulsed Laser

〇Yusuke Ishii¹, Thee Ei Khaing Shwe¹, Motoaki Iwaya², Daisuke Iida³, Kazuhiro Okawa³, Bei Ma¹, Yoshihiro Ishitani¹ (1.Chiba Univ., 2.Meijo Univ., 3.KAUST)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[17a-W2_401-5]Estimation of displacement of probe laser in photothermal deflection and temperature difference caused by nonradiative recombination by using piezoelectric device

〇Tasuke Saito^1,2, Futoshi Iwata³, Tohru Honda⁴, Takashi Suemasu¹, Masatomo Sumiya² (1.University of Tsukuba, 2.NIMS, 3.Shizuoka University, 4.Kogakuin University)

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[17a-W2_401-6]Recombination Dynamics Analysis by Spectrally and Time-Resolved TRPL in GaN with Different Impurity Concentrations

Keita Ikebe¹, Osuke Ito², Kotaro Akiyama², Yuta Sakura², Shota Kaneki³, Hajime Fujikura³, Kazunori Iwamitsu¹, Zentaro Akase¹, Atsushi A. Yamaguchi², 〇Shigetaka Tomiya¹ (1.NAIST, 2.KIT, 3.Sumitomo Chemical)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[17a-W2_401-7]Internal quantum efficiency and band-edge polarization properties of 230-nm-band AlGaN thin films and AlGaN quantum well structures

Aoi Sasaki¹, Junichi Moriwaka¹, Junya Nishimoto¹, 〇Hideaki Murotani², Satoshi Kurai¹, Narihito Okada¹, Ryota Akaike³, Hideto Miyake³, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.NIT, Tokuyama Coll., 3.Mie Univ.)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[17a-W2_401-8]Photoluminescence excitation spectroscopy of room-temperature optically pumped stimulated emission in deep-UV AlGaN-based quantum wells

Kaichi Tani¹, Shunsuke Ochiai¹, Yuhi Muragaki¹, Yusaku Kinouchi¹, 〇Hideaki Murotani², Satoshi Kurai¹, Narihito Okada¹, Muhammad Ajmal Khan³, Hideki Hirayama³, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.NIT, Tokuyama Coll., 3.RIKEN)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[17a-W2_401-9]E || c propagation loss of hydride vapor-phase epitaxy grown AlN substrates studied by shifting excitation spot method

〇Takumi Ikeshima¹, Ryota Ishii¹, Mitsuru Funato¹ (1.Kyoto Univ.)

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