[17a-W9_324-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)English Presentation

[17a-W9_324-1] [The 59th Young Scientist Presentation Award Speech] Enhanced Argon Plasma Treatment Strategies for Contact-Controlled Rare-Metal-Free Oxide Semiconductor Transistors

〇Mark Denusta Ilasin¹, Juan Paolo Soria Bermundo¹, Pongsakorn Sihapitak¹, Candell Grace Paredes Quino¹, Magdaleno Jr. Rigodon Vasquez², Senku Tanaka³, Hidenori Kawanishi¹, Yukiharu Uraoka¹ (1.NAIST, 2.UPD, 3.Kindai Univ.)

Keywords:

argon plasma,source-gated transistors,thin-film transistors

This study presents a sustainable fabrication approach for source-gated transistors (SGTs) utilizing a rare-metal-free amorphous oxide channel layer and incorporating selective argon (Ar) plasma treatment on the channel layer. Ar plasma tunes the Fermi energy of the thin film to engineer a localized Schottky junction at the source electrode using an ohmic metal, which eliminates the requirement for specialized Schottky metals. The plasma-induced SGT device revealed a lower drain saturation voltage (6.0 V) than the TFT (9.0 V) and a reduced drain current of 1.1 µA as compared to 3.5 µA at a gate voltage of 10 V. Thus, demonstrating plasma-induced barrier formation and SGT behavior. This new approach not only simplifies the SGT fabrication process but also demonstrates the viability of alternative Ar plasma sources for a more sustainable process.