The 73rd JSAP Spring Meeting 2026
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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[17a-W9_324-1~10]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Mar 17, 2026 9:15 AM - 12:00 PM JST
Tue. Mar 17, 2026 12:15 AM - 3:00 AM UTC
W9_324 (West Bldg. 9)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)English Presentation

[17a-W9_324-1][The 59th Young Scientist Presentation Award Speech] Enhanced Argon Plasma Treatment Strategies for Contact-Controlled Rare-Metal-Free Oxide Semiconductor Transistors

〇Mark Denusta Ilasin1, Juan Paolo Soria Bermundo1, Pongsakorn Sihapitak1, Candell Grace Paredes Quino1, Magdaleno Jr. Rigodon Vasquez2, Senku Tanaka3, Hidenori Kawanishi1, Yukiharu Uraoka1 (1.NAIST, 2.UPD, 3.Kindai Univ.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)English Presentation

[17a-W9_324-2]Effectiveness of gate dielectric AlOx interlayer on electrical characteristics improvement in ultrathin InOx FETs

〇CHIATSONG CHEN1, Kasidit Toprasertpong2, Toshifumi Irisawa1, Wen-Hsin Chang1, Shinji Migita1, Yukinori Morita1, Hiroyuki Ota1, Tatsuro Maeda1 (1.AIST, 2.the Univ. of Tokyo)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[17a-W9_324-3]Improved Thermal Stability in Thin-Film InOx FETs Using PEALD-AlOx Films

〇(M1)Kazuki Ishiyama1,2, Chen Chia-Tsong2, Toshifumi Irisawa2, Kasidit Toprasertpong3, Tatsuro Maeda2 (1.Nihon univ., 2.AIST, 3.Tokyo univ.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[17a-W9_324-4]Improvement of Transistor Performance using oxide thin films fabricated
by Mist-CVD

〇KEIGO EBATO1, SIMIZU KOUSAKU1 (1.Nihon Univ.)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[17a-W9_324-5]Impact of post processes for flexibility on NiO based visible light transparent thin film transistors

〇Yoshiki Matsubayashi1, Taisei Hattori1, Yuna Koide1, Mutsumi Sugiyama1,2 (1.Tokyo Univ. Sci., 2.RIST)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[17a-W9_324-6]Enhancement Mechanisms of Carrier density and Mobility of Ga:ZnO (GZO) Films Deposited with Zn Supply

〇Yasuji Yamada1, Yumika Yamada2,1, Shuhei Funaki1 (1.Shimane Univ., 2.Kobelko Res. Inst.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[17a-W9_324-7]Evaluation and comparison of electrical properties via the hall effect in ZnGa2O4 polycrystalline thin films prepared by hydrothermal synthesis and sputtering

〇Reiya Kase1, Tomoki Iitsuka1, Yuya Oguma1, Kazunuki Yamamoto2, Satoshi Ishii1 (1.Tokyo Denki Univ., 2.Chiba Univ.)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[17a-W9_324-8]Conductivity Modulation of Cu Thin Films by Mist-CVD and Solution Structure

〇Tatsuki Okada1, Ryousuke Ohashi1, Kei Mizumoto1, Htet Su WAI1, Mondal Abhay Kumar1, Toshiyuki Kawaharamura1,2 (1.Kochi Univ. Technology, 2.Res.Inst)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[17a-W9_324-9]Large Area Transferable Oxide Gate Dielectric Layers Grown on Graphene by Mist Chemical Vapor Deposition

Shunsuke Yamamura1, Kuddus Abdul2, 〇Shinichiro Mouri1 (1.Ritsumeikan Univ., 2.R-GIRO)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[17a-W9_324-10]High-Transmittance Position Sensitive Detector Using Ga-Doped SnO2

〇Yamato Ono1, Tanaka Tomohiro1, Kajii Hirotake2, Mikawa Michio1, Takeuti Touya1, Fujita Suzuka1, Murakami Hiroshi1, Tanaka Kunihiko3, Kanai Ayaka3, Morimune Taitirou1 (1.NIT Kagawa., 2.Osaka Univ., 3.Nagaoka Univ tech.)
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