[17p-M_278-1~16] 6.1 Ferroelectric thin films

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-M_278-11] Electric-Field-induced Ferromagnetic Domain Change by Ferroelectric Topological Domain Switching in Co-substituted BiFeO₃ Nanodots

〇(P)Koomok Lee¹, Peter Meisenheimer², Paul Stevenson³, Nagase Yasuhito¹, Shigematsu Kei^1,4, Ramamoorthy Ramesh^2,5, Azuma Masaki^1,4 (1.Science Tokyo, 2.UC Berkeley, 3.Northeastern Univ., 4.KISTEC, 5.Rice Univ.)

Keywords:

Multiferroic,NV centre magnetometry,Canted Antiferromagnet

Co-Subsituted BiFeO₃ (BFCO) is a room temperature multiferroic material exhibiting both ferroelectric and weakly ferromangeic properties. By demonstrating electric field induced magentisation reversal of BFCO at room temperature, the development of low-power-consumption magnetic memory device can be achieved. In this study, we fabricated BFCO into 190 nm diametre of nanodot structure.Toward the magnetic memory bit application, we investigated electric field induced magnetic domain change following by ferroelectric domain structure.