[17p-M_278-1~16] 6.1 Ferroelectric thin films

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-M_278-4] Crystal structure control of epitaxial Pb(Zr,Ti)O₃ thin films using strain engineering induced by bottom electrode layers

〇(D)MIKI NAKAHATA¹, KEISUKE ISHIHAMA², YOSHITAKA EHARA³, TAKAO SHIMIZU⁴, LINGLING XIE⁵, DAISUKE KAN⁵, TOMOAKI YAMADA⁶, KAZUKI OKAMOTO¹, HIROSHI FUNAKUBO¹ (1.Sci. Tokyo, 2.Tokyo Tech., 3.NDA, 4.NIMS, 5.Kyoto Univ., 6.Nagoya Univ.)

Keywords:

domian structure control,PZT thin films,Sr(Zr,Ti)O3 thin films

In ferroelectric thin films, domain structures can be controlled through lattice matching with substrates and bottom layers, significantly affecting ferroelectric properties. However, the fabrication of a-axis–oriented films with in-plane polarization requires sufficient in-plane tensile strain, which is difficult to achieve for Pb(Zr_x, Ti_1-x)O₃ compositions with high Zr content due to the limited availability of suitable bottom-layer materials. In this study, tensile and compressive strains were introduced into Pb(Zr_0.3 Ti_0.7)O₃ thin films by employing Sr(Zr_y, Ti_1-y)O₃ buffer layers and La–SrSnO₃ and Ba_0.4Sr_0.6RuO₃ bottom electrodes, and the thickness dependence of the crystal structure and domain structure was systematically investigated.