[17p-M_278-1~16] 6.1 Ferroelectric thin films

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-M_278-8] Characterization of (111)/(-111)-oriented Pb(Zr_0.65Ti_0.35)O₃ transferred films using micro-Transfer-Printing

〇(M1)Natsuki Takahashi^1,2, Toshiya Murai², Rai Kou², Shinya Kondo¹, Tomoaki Yamada¹ (1.Nagoya Univ., 2.AIST)

Keywords:

ferroelectric,optical memristor,transfer

In this study, we demonstrated the transfer of ferroelectric Pb(Zr_0.65Ti_0.35)O₃ (PZT) thin flms onto Si substrates by using micro-transfer-printing (µ-TP) and evaluated properties of transferred films, with the goal of integration of PZT thin films into a silicon platform for optical device applications. The results of crystal structure and electrical properties evaluations of the PZT transferred films using µ-TP indicated that its crystal structure and ferroelectricity were maintained before and after the transfer, and it showed the possibilities of integration of PZT thin films into a silicon platform.