[17p-M_374-1~8] The Prospects of Data Storage and Non-Volatile Memory Technologies in the AI era

5:05 PM - 5:35 PM JST(8:05 AM - 8:35 AM UTC)

[17p-M_374-8] Challenges in the highly stacked generation of 3D flash memory, and horizontal channel flash memory as its countermeasure

〇Minoru Oda¹ (1.Kioxia Corporation)

Keywords:

flash memory,horizontal channel flash

3D flash memory faces the problem of cell current degradation as the number of layers increases. We propose a new memory structure, horizontal channel flash (HCF), which has constant cell current even at high stacking layers. We also discuss its device characteristics and issues.