[17p-PA5-1~11] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[17p-PA5-3] Estimation of defect densities responsible for spin polarization amplification in low-temperature-grown dilute nitride InGaAsN quantum dots

〇Ayano Morita¹, Daiki Mineyama¹, Junichi Takayama¹, Akihiro Murayama¹, Satoshi Hiura¹ (1.IST, Hokkaido Univ.)

Keywords:

quantum dot,dilute nitride semiconductor,photoluminescence